Doping of epitaxial CVD silicon with arsenic or phosphorus (i). Steady state conditions
- 5 April 1985
- journal article
- Published by Wiley in Crystal Research and Technology
- Vol. 20 (4) , 479-484
- https://doi.org/10.1002/crat.2170200411
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- On the adsorption‐ and equilibrium‐referred interpretation of the doping element incorporation during the growth of CVD epitaxial siliconCrystal Research and Technology, 1983
- Incorporation of dopants into epitaxial CVD‐Silicon layers and incorporation equilibriumCrystal Research and Technology, 1982
- Total pressure dependence of doping element incorporation during the chemical vapour deposition of epitaxial siliconCrystal Research and Technology, 1982
- Computer Simulation in Silicon EpitaxyJournal of the Electrochemical Society, 1981
- The Incorporation of Phosphorus in Silicon Epitaxial Layer GrowthJournal of the Electrochemical Society, 1974