Growth investigations of 1.3 μm GaInAsP/InP MQW laser diodes grown by chemical beam epitaxy
- 1 February 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 127 (1-4) , 165-168
- https://doi.org/10.1016/0022-0248(93)90597-p
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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