In0.53Ga0.47As/InP Multiquantum Well Lasers Grown by Metalorganic Molecular Beam Epitaxy (MOMBE)
- 1 February 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (2B) , L286
- https://doi.org/10.1143/jjap.30.l286
Abstract
Double-channel planar buried-heterostructure lasers with a multi-quantum well active layer are fabricated by a combination of MOMBE and liquid-phase epitaxy. The lasers exhibit room temperature cw operation at a threshold current of 30 mA and emit at a wavelength of 1.57 µm. The threshold currents of 70% of the laser chips tested are in the range of 30-35 mA. An originally designed MOMBE system with a diffusion-pumped growth chamber is also described.Keywords
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