CBE growth of low threshold 1.5 μm InGaAs/InGaAsP MQW lasers

This publication has 11 references indexed in Scilit:

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  Applied Physics Letters, 1991
• Very low threshold single quantum well graded-index separate confinement heterostructure InGaAs/InGaAsP lasers grown by chemical beam epitaxy
  Applied Physics Letters, 1991
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  Japanese Journal of Applied Physics, 1991
• Effect of strain on the resonant frequency and damping factor in InGaAs/InP multiple quantum well lasers
  Applied Physics Letters, 1991
• GaInAs/InP Quantum Wells and Strained-Layer Superlattices Grown by Chemical Beam Epitaxy
  Japanese Journal of Applied Physics, 1991
• In_0.53Ga_0.47As/InP Multiquantum Well Lasers Grown by Metalorganic Molecular Beam Epitaxy (MOMBE)
  Japanese Journal of Applied Physics, 1991
• Low threshold and high power output 1.5 μm InGaAs/InGaAsP separate confinement multiple quantum well laser grown by chemical beam epitaxy
  Applied Physics Letters, 1990
• Highly Beryllium-Doped and Lattice-Matched GaInAsP/InP Growth by Chemical Beam Epitaxy (CBE)
  Japanese Journal of Applied Physics, 1990
• High quantum efficiency, high power, modulation doped GaInAs strained-layer quantum well laser diodes emitting at 1.5 μm
  Electronics Letters, 1989
• High Quantum Efficiency, High Output Power 1.3 µm GaInAsP Buried Graded-Index Separate-Confinement-Heterostructure Multiple Quantum Well (GRIN-SCH-MQW) Laser Diodes
  Japanese Journal of Applied Physics, 1989