High-purity In0.53Ga0.47As layer grown by liquid phase epitaxy
- 1 July 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 89 (4) , 391-394
- https://doi.org/10.1016/0022-0248(88)90198-4
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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