Excess surface currents in p-n junctions and bipolar transistors
- 31 August 1971
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 14 (8) , 693-705
- https://doi.org/10.1016/0038-1101(71)90149-3
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Effets de la defocalisation (c.c. et c.a.) sur le comportement des transistors a jonctionsSolid-State Electronics, 1969
- Excess current in p – n junctions associated with surface statesElectronics Letters, 1968
- Influence of surface conditions on silicon planar transistor current gainSolid-State Electronics, 1967
- Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditionsSolid-State Electronics, 1966
- Low-current alpha in silicon transistorsIRE Transactions on Electron Devices, 1962
- The Theory ofp-nJunctions in Semiconductors andp-nJunction TransistorsBell System Technical Journal, 1949