Reaction between SiC and W, Mo, and Ta at elevated temperatures

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Abstract
The stability of W, Mo, and Ta in contact with single-crystal β-SiC at elevated temperatures has been investigated using Auger sputter profiling. All three metals were found to form a thin-mixed layer of metal carbide and silicide upon metal deposition at room temperature. This layer is thought to be the result of surface defects which weaken the Si—C bonds and allow a low-temperature reaction to occur. Upon heating, the Ta readily reacts with the SiC substrate and forms a mixed layer of Ta carbide and silicide at annealing temperatures as low as 400 °C, however, the W/SiC and Mo/SiC systems are stable and change very little after annealing at 850 and 800 °C, respectively.