Monolithic integration of InGaAsP-InP strained-layer distributed feedback laser and external modulator by selective quantum-well interdiffusion
- 1 September 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 7 (9) , 1016-1018
- https://doi.org/10.1109/68.414687
Abstract
A new approach using a cap-annealing partial disordering technique is demonstrated for 1.55-/spl mu/m multiple-quantum-well (MQW) distributed feedback (DFB) laser-external electroabsorption modulator monolithic integration. Good static performances of the light source (15 mA threshold current, 14-dB on-off ratio for a 4-V voltage swing) are reported using this technique that preserves the material optical and electrical quality.Keywords
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