Integrated external-cavity InGaAs/InP lasers using cap-annealing disordering
- 1 May 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 3 (5) , 421-423
- https://doi.org/10.1109/68.93865
Abstract
InGaAs/InP multiple-quantum-well lasers were integrated with low-loss waveguides in the long-wavelength region using a cap-annealing disordering technique which does not require a regrowth process. The coupling efficiency between them does not increase the threshold current of the lasers. The optical loss in the waveguide was 7.8 cm/sup -1/ and was due to free-carrier absorption in the cladding layers.Keywords
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