The influence of oxygen on the concentration dependence of electron mobility in silicon
- 16 February 1974
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 21 (2) , 419-425
- https://doi.org/10.1002/pssa.2210210204
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Lattice-Scattering Ohmic Mobility of Electrons in SiliconPhysica Status Solidi (b), 1970
- Hall mobility and carrier repopulation of n-type silicon at high electric fieldsPhysics Letters A, 1968
- Temperature dependence of hall mobility and μH/μD for SiJournal of Physics and Chemistry of Solids, 1963
- The Electrical Conductivity and Hall Effect of SiliconProceedings of the Physical Society, 1958
- Hall and Drift Mobility in High-Resistivity Single-Crystal SiliconPhysical Review B, 1957
- Transport Properties of a Many-Valley SemiconductorBell System Technical Journal, 1955
- Electrical Properties of Silicon Containing Arsenic and BoronPhysical Review B, 1954
- Drift Mobilities in Semiconductors. II. SiliconPhysical Review B, 1954
- Electrical Properties of-Type GermaniumPhysical Review B, 1954
- Temporary Traps in Silicon and GermaniumPhysical Review B, 1953