Low-temperature fabrication of silicon nitride films by ArF excimer laser irradiation
- 1 August 1988
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 46 (4) , 249-253
- https://doi.org/10.1007/bf01210344
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Excimer laser enhanced nitridation of silicon substratesApplied Physics Letters, 1984
- Photon enhanced oxidation of siliconApplied Physics Letters, 1983
- Pulsed laser heating of silicon: The coupling of optical absorption and thermal conduction during irradiationJournal of Applied Physics, 1983
- Growth Kinetics of Silicon Thermal NitridationJournal of the Electrochemical Society, 1982
- Laser heating of semiconductors—effect of carrier diffusion in nonlinear dynamic heat transport processJournal of Applied Physics, 1981
- Plasma-enhanced thermal nitridation of siliconApplied Physics Letters, 1981
- Thermally grown silicon nitride films for high-performance MNS devicesApplied Physics Letters, 1978
- Photoionization and Total Absorption Cross Section of Gases. I. Ionization Potentials of Several Molecules. Cross Sections of NH3 and NOThe Journal of Chemical Physics, 1954