Orientation and temperature dependent adsorption of H2S on GaAs: Valence band photoemission
- 1 December 1987
- journal article
- Published by Elsevier in Surface Science
- Vol. 192 (1) , 81-94
- https://doi.org/10.1016/s0039-6028(87)81163-9
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Orientation-dependent surface core-level shifts and chemical shifts on clean and H2S-covered GaAsSurface Science, 1987
- Defect-titration on cylindrical GaAs by H2S adsorptionSurface Science, 1987
- Surface dipole and Fermi-level position on clean, oxygen-, and water-covered cylindrical Si crystals: A photoelectron spectroscopy studyPhysical Review B, 1985
- Effect of arsenic species (As2 OR As4) on the crystallograpffic and electronic structure of mbe-grown GaAs(001) reconstructed surfacesSurface Science, 1983
- Ultraviolet photoelectron spectroscopy investigation of electron affinity and polarity on a cylindrical GaAs single crystalPhysical Review B, 1983
- Emergence of a periodic mode in the so-called turbulent region in a circular Couette flowJournal de Physique Lettres, 1982
- Structure and reactivity of GaAs surfacesProgress in Surface Science, 1981
- Sulfur incorporation in VPE GaAsJournal of Crystal Growth, 1981
- Angular resolved ups of surface states on GaAs(111) prepared by molecular beam epitaxySurface Science, 1979
- A multiple technique UHV chamber for the investigation of epitaxially grown semiconductor surfacesJournal of Physics E: Scientific Instruments, 1976