cw laser annealing of hydrogenated amorphous silicon obtained by rf sputtering
- 1 January 1981
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (1) , 476-479
- https://doi.org/10.1063/1.329811
Abstract
Hydrogenated amorphous silicon obtained by rf sputtering has been annealed using cw lasers (Ar or Kr ion). The annealed films have been microanalyzed for quantitative profiling of hydrogen and argon. TEM analysis was used for structure determination. The release of hydrogen and argon as well as the grain size of the polycrystalline material obtained are related to the deposited laser energy. Comparison with other production methods of such material from the amorphous state is discussed.This publication has 8 references indexed in Scilit:
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