Interfacial reaction between chemically vapor-deposited HfO2 thin films and a HF-cleaned Si substrate during film growth and postannealing
- 1 April 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 80 (13) , 2368-2370
- https://doi.org/10.1063/1.1466534
Abstract
Interfacial reactions between HfO 2 thin films and a Si substrate during thin-filmgrowth and postannealing under a N 2 atmosphere were investigated by high-resolution transmission electron microscopy,Auger electron spectroscopy, and electrical measurements of metal–insulator–semiconductor capacitors. HfO 2 thin films were deposited on HF-cleaned Si wafers by a chemical-vapor-deposition technique at a wafer temperature of 200 °C using a carbon-free precursor [ Hf ( NO 3 ) 4 ]. The film thicknesses ranged from 1.5 to 5.6 nm. During the initial stage of film growth, the Si surface oxidized to form a Si-rich hafnium silicate film. With increasing deposition time, Hf-rich hafnium silicate films grew. Postannealing resulted in a double-layered filmstructure with upper and interfacial layers having dielectric constants of approximately 9.3 and 5.6, respectively. The results were compared with the results from HfO 2 filmsgrown on SiO 2 -passivated Si wafers.Keywords
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