Dry Etching Processes
- 1 January 1989
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 100 references indexed in Scilit:
- Anisotropic etching of SiO2 in low-frequency CF4/O2 and NF3/Ar plasmasJournal of Applied Physics, 1984
- Degradation of poly(methyl methacrylate) in CF4 and CF4/O2 plasmasJournal of Applied Physics, 1983
- Organosilicon monomers for plasma-developed x-ray resistsJournal of Vacuum Science and Technology, 1981
- Spectroscopic diagnostics of CF4-O2 plasmas during Si and SiO2 etching processesJournal of Applied Physics, 1981
- Anisotropic plasma etching of polysiliconJournal of Vacuum Science and Technology, 1980
- Reactive ion etching of siliconJournal of Vacuum Science and Technology, 1979
- Fabrication of deep square wave structures with micron dimensions by reactive sputter etchingApplied Physics Letters, 1978
- Plasma reactor design for the selective etching of SiO2 on SiSolid-State Electronics, 1976
- Control of relative etch rates of SiO2 and Si in plasma etchingSolid-State Electronics, 1975
- Kinetic data for hydrogen and deuterium atom abstraction by methyl and trifluoromethyl radicals in the gaseous phaseChemical Reviews, 1971