A symmetrical nonlinear HFET/MESFET model suitable for intermodulation analysis of amplifiers and resistive mixers
- 1 January 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 48 (1) , 15-22
- https://doi.org/10.1109/22.817467
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Intermodulation analysis of FET resistive mixers using Volterra seriesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Modeling MESFETs for intermodulation analysis of resistive FET mixersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Accurate small-signal modeling of HFET's for millimeter-wave applicationsIEEE Transactions on Microwave Theory and Techniques, 1996
- Validation of a nonlinear transistor model by power spectrum characteristics of HEMT's and MESFET'sIEEE Transactions on Microwave Theory and Techniques, 1995
- Nonlinear models for the intermodulation analysis of FET mixersIEEE Transactions on Microwave Theory and Techniques, 1995
- Novel single device balanced resistive HEMT mixersIEEE Transactions on Microwave Theory and Techniques, 1995
- A new empirical nonlinear model for HEMT and MESFET devicesIEEE Transactions on Microwave Theory and Techniques, 1992
- Modeling MESFETs for intermodulation analysis of mixers and amplifiersIEEE Transactions on Microwave Theory and Techniques, 1990
- A new method for determining the FET small-signal equivalent circuitIEEE Transactions on Microwave Theory and Techniques, 1988
- A MODFET dc model with improved pinchoff and saturation characteristicsIEEE Transactions on Electron Devices, 1986