Modeling MESFETs for intermodulation analysis of resistive FET mixers
- 19 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1247-1250
- https://doi.org/10.1109/mwsym.1995.406197
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Nonlinear model for predicting intermodulation distortion in GaAs FET RF switch devicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- How to model intermodulation distortionPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Modeling MESFET's for inter-modulation analysis in RF switchesIEEE Microwave and Guided Wave Letters, 1994
- Accurate simulation of GaAs MESFET's intermodulation distortion using a new drain-source current modelIEEE Transactions on Microwave Theory and Techniques, 1994
- Distortion in broad-band gallium arsenide MESFET control and switch circuitsIEEE Transactions on Microwave Theory and Techniques, 1991
- Modeling MESFETs for intermodulation analysis of mixers and amplifiersIEEE Transactions on Microwave Theory and Techniques, 1990
- Modeling the gate I/V characteristic of a GaAs MESFET for Volterra-series analysisIEEE Transactions on Microwave Theory and Techniques, 1989
- A GaAs MESFET Mixer with Very Low IntermodulationIEEE Transactions on Microwave Theory and Techniques, 1987