Modification of n-Si(100) Surface by Scanning Tunneling Microscope Tip-Induced Anodization under Nitrogen Atmosphere
- 1 January 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (1B) , L143-145
- https://doi.org/10.1143/jjap.33.l143
Abstract
A hydrogen-terminated silicon (Si) surface was modified under nitrogen atmosphere by the use of a scanning tunneling microscope (STM). Nanoscale silicon oxide ( SiO x ) patterns were fabricated by STM tip-induced oxidation of Si with adsorbed water. Oxide formation was promoted in the sample bias range of +2.0∼+ 10.0 V (tip-induced anodization) 6–28 times as efficiently as that in the bias range of -3.0∼-5.0 V (field-enhanced oxidation). The spatial resolution of SiO x patterns was improved by increasing the tip scan rate, and line patterns of ∼20 nm in width were obtained under the optimized conditions.Keywords
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