Study of resistivity and majority carrier concentration of silicon damaged by neutron irradiation
- 1 February 1998
- journal article
- Published by Elsevier in Nuclear Physics B - Proceedings Supplements
- Vol. 61 (3) , 456-463
- https://doi.org/10.1016/s0920-5632(97)00602-6
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Current-voltage and impedance characteristics of neutron irradiated silicon detectors at fluences up to 1016 n/cm2Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1996
- Radiation damage to silicon detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1995
- Carrier drift mobility study in neutron irradiated high purity siliconNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1995
- Hall effect analysis on neutron irradiated high resistivity siliconNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1995
- Fast neutron-induced changes in net impurity concentration of high-resistivity siliconIEEE Transactions on Nuclear Science, 1992
- Results on radiation hardness of silicon detectors up to neutron fluences of 1015 n/cm2Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1992
- Silicon detector developments for calorimetry: Technology and radiation damageNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1990
- Electronic properties of substitutionally doped amorphous Si and GePhilosophical Magazine, 1976
- Disordered Regions in Semiconductors Bombarded by Fast NeutronsJournal of Applied Physics, 1959
- Hall Effect and Conductivity in Porous MediaJournal of Applied Physics, 1956