High-field electron transport in InxGa1−xAsyP1−y (λg =1.2 μm)
- 1 December 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (11) , 1065-1067
- https://doi.org/10.1063/1.93402
Abstract
A fixed‐frequency microwave time‐of‐flight technique has been used to measure electron drift velocities in Inx Ga1−x Asy P1−y (λg =1.2 μm) at temperatures 95–400 K and electric field strengths of up to 200 kV/cm. The room‐temperature electron drift velocity in the quaternary is equal to the velocity in GaAs for field strengths greater than ∼62 kV/cm, but the velocity is higher in the quaternary for field strengths from about 20–62 kV/cm at 300 K. At temperatures above 300 K the high‐field velocity is larger in the quaternary than in GaAs, but below 300 K the high‐field velocity is larger in GaAs.Keywords
This publication has 12 references indexed in Scilit:
- The temperature and pressure dependence of the electron and hole mobilities in GaxIn1-xAsyP1-y alloysJournal of Electronic Materials, 1982
- Electron Hall mobility in GaxIn1−xAsyP1−y calculated with two-longitudinal-optical-phonon modelApplied Physics Letters, 1981
- Temperature dependence of the transferred electron threshold current in In
1−
x
Ga
x
As
y
P
1−
y
Electronics Letters, 1981
- Saturation velocity determination for In0.53Ga0.47As field-effect transistorsApplied Physics Letters, 1981
- Electron velocity in Si and GaAs at very high electric fieldsApplied Physics Letters, 1980
- Evidence for alloy scattering from pressure-induced changes of electron mobility in In
1−
x
Ga
x
As
y
P
1−
y
Electronics Letters, 1980
- Compositional dependence of the electron mobility in Inl-x Gax Asy P1-yJournal of Electronic Materials, 1980
- Background carrier concentration and electron mobility in LPE In1−xGaxAsyP1−y layersApplied Physics Letters, 1979
- Hot electron and magneto-transport properties of In1−xGaxP1−yAsy liquid phase epitaxial filmsSolid-State Electronics, 1978
- Observation of the transferred-electron effect in GaxIn1−xAsyP1−yApplied Physics Letters, 1977