Properties of (Ga0.47In0.53)As epitaxial layers grown by metalorganic vapor phase epitaxy (MOVPE) using alternative arsenic precursors
- 1 January 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 170 (1-4) , 155-160
- https://doi.org/10.1016/s0022-0248(96)00640-9
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Metalorganic vapor phase epitaxy of InP using the novel P-source ditertiarybutyl phosphine (DitBuPH)Journal of Electronic Materials, 1996
- Highly controlled lnGaAs(P)/lnP MQW interfaces grown by MOVPE using TBA and TBP precursorsJournal of Electronic Materials, 1996
- Selective MOVPE growth of InGaAsP and InGaAs using TBA and TBPJournal of Electronic Materials, 1996
- Investigations on deep traps in GaAs and (Al Ga1−)As bulk layers grown by metalorganic vapour-phase epitaxy using the new alternative arsenic precursor diethyl-tert-butylarsinJournal of Crystal Growth, 1995
- GaAs substrate pretreatment and metalorganic vapour phase epitaxy of GaAs, AlAs and (AlGa) As using β-eliminating trialkyl-As precursorsJournal of Crystal Growth, 1994
- Metalorganic vapor phase epitaxy using organic group V precursorsJournal of Crystal Growth, 1994
- In-situ formation of As-H functions by β-elimination of specific metalorganic arsenic compounds for the MOVPE of III/V semiconductorsJournal of Crystal Growth, 1992
- MOVPE growth of InGaAsP using TBA and TBP with extremely low V/III ratioJournal of Crystal Growth, 1992
- Non-hydride group V sources for OMVPEJournal of Electronic Materials, 1988
- Arsen‐organo‐Verbindungen. V. Zur Darstellung der Lithiumderivate des Mono‐ und Di‐tert.butylarsinsZeitschrift für anorganische und allgemeine Chemie, 1965