Influence of growth temperature upon the In solid composition in InxGa1−xSb epilayers grown by metalorganic chemical vapor deposition

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Abstract
InxGa1−xSb epitaxial layers have been grown on (100) GaSb substrates under TMSb/(TMIn+TEGa) ratio of 5.8 and system pressure of 170 Torr at different substrate temperatures (550–630 °C). From analyses of both the x‐ray diffraction and photoluminescence (PL), the indium solid mole fraction was found to decrease with increasing growth temperature. The x‐ray diffraction patterns degrade with increasing lattice mismatch (or with increasing In mole fraction in the solid). The photoluminescence peak wavelength decreases with increasing growth temperature. The optimum growth temperature is about 600 °C at which the good quality InxGa1−xSb epilayers with the most mirrorlike surface, narrowest PL full width at half‐maximum (9 meV) and strongest PL intensity can be obtained. The narrowest full width at half‐maximum value is only 9 meV. The full width at half‐maximum of 10‐K photoluminescence peaks was found to increase with increasing lattice mismatch due to the increasing misfit dislocations and strains existing at the lattice‐mismatched interface.