Effects of uniaxial stress on the cyclotron resonance in inversion layers on Si(100)
- 31 August 1980
- journal article
- Published by Elsevier in Surface Science
- Vol. 98 (1-3) , 413-415
- https://doi.org/10.1016/0039-6028(80)90522-1
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
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- Density-functional calculation of subband structure of Si inversion layers under stressSolid State Communications, 1979
- Comparison of Shubnikov-de Haas effect and cyclotron resonance on Si(100) MOS transistors under uniaxial stressSolid State Communications, 1979
- Cyclotron resonance in two interacting electron systems with application to Si inversion layersPhysical Review B, 1978
- The effect of temperature and stress on the surface cyclotron resonance in (100)SiSurface Science, 1978
- Stress Effects on Electronic Properties of Silicon Inversion LayersJournal of the Physics Society Japan, 1978
- Surface cyclotron resonance in Si under uniaxial stressSolid State Communications, 1976
- Cyclotron resonance of electrons in surface space-charge layers on siliconPhysical Review B, 1976
- Temperature-Dependent Cyclotron Mass of Inversion-Layer Electrons in SiPhysical Review Letters, 1975
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967