A survey of thermal-electric feedback coefficients in GaAs-based heterojunction bipolar transistors
- 28 February 1995
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 38 (2) , 407-411
- https://doi.org/10.1016/0038-1101(94)00116-w
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- The collapse of current gain in multi-finger heterojunction bipolar transistors: its substrate temperature dependence, instability criteria, and modelingIEEE Transactions on Electron Devices, 1994
- Current gain collapse in microwave multifinger heterojunction bipolar transistors operated at very high power densitiesIEEE Transactions on Electron Devices, 1993
- Diode ideality factor for surface recombination current in AlGaAs/GaAs heterojunction bipolar transistorsIEEE Transactions on Electron Devices, 1992
- Near-ideal I-V characteristics of GaInP/GaAs heterojunction bipolar transistorsIEEE Electron Device Letters, 1992
- The use of tertiarybutylphosphine and tertiarybutylarsine for the metalorganic molecular beam epitaxy of the In0.53Ga0.47As/InP and In0.48Ga0.52P/GaAs materials systemsJournal of Crystal Growth, 1992
- Organometallic vapor phase epitaxy of AlGaAs/GaAs heterojunction bipolar transistors using tertiarybutylarsineApplied Physics Letters, 1991
- Band lineup for a GaInP/GaAs heterojunction measured by a high-gain N p n heterojunction bipolar transistor grown by metalorganic chemical vapor depositionJournal of Applied Physics, 1989
- Energy band alignment in GaAs:(Al,Ga)As heterostructures: The dependence on alloy compositionJournal of Applied Physics, 1986
- Emitter-Base Junction Size Effect on Current Gain Hfe of AlGaAs/GaAs Heterojunction Bipolar TransistorsJapanese Journal of Applied Physics, 1985
- Thermal properties of high-power transistorsIEEE Transactions on Electron Devices, 1967