Surface and bulk equilibrium structures of silicon-germanium alloys from Monte Carlo simulations
- 15 June 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 45 (23) , 13458-13464
- https://doi.org/10.1103/physrevb.45.13458
Abstract
The technologically important alloy of silicon and germanium is known to have no long-range order in the bulk. Whether there is any short-range order in the bulk and the nature of the structure of the surface and near-surface regions remains the subject of some debate. We present a method of Monte Carlo simulation that is effective for studying the equilibrium structural properties of the bulk and strained-superlattice alloys. The simulations of the bulk alloy indicate that there is no short-range order and that the Si-Ge alloy is a true random alloy at room temperature and above. The surfaces of these alloys experience segregation of germanium to the surface, with no long-range order observed in the slightly silicon-rich subsurface layers, in agreement with recent experiments.Keywords
This publication has 28 references indexed in Scilit:
- Orientation dependence of growth quality in strained-layer superlattices: A model-potential study of the Si-Ge systemPhysical Review B, 1991
- A review of theoretical and experimental work on the structure of GexSi1-xstrained layers and superlattices, with extensive bibliographyAdvances in Physics, 1990
- Dynamics of strained-layer epitaxy: Simulation of growth and annealing of GexSi1−x/Si systemsJournal of Vacuum Science & Technology B, 1988
- Physics and applications of GexSi1-x/Si strained-layer heterostructuresIEEE Journal of Quantum Electronics, 1986
- Chemisorption ofH2O onGexSil−x(100)(2×1)Physical Review B, 1986
- Formation and decomposition of (100)(2×1):H and (100)(1×):2HPhysical Review B, 1986
- Structural studies of crystalline and amorphous SiGe alloys using EXAFS and Raman scatteringJournal of Non-Crystalline Solids, 1983
- Crystallization process in tetrahedrally bonded binary amorphous semiconductorsJournal of Non-Crystalline Solids, 1983
- Vibrational properties of concentrated GeSi alloysSolid State Communications, 1976
- Intrinsic Optical Absorption in Germanium-Silicon AlloysPhysical Review B, 1958