100 GHz Double Heterostructure GaInAs/InP p-i-n Photodiode
- 1 January 1993
- proceedings article
- Published by Optica Publishing Group
Abstract
We report double heterostructure GaInAs/InP p-i-n photodiodes with pulsewidths as short as 3.0 ps, bandwidths exceeding 100 GHz, and external quantum efficiency of 50%.Keywords
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