Very low room-temperature threshold current density dots in a well (DWELL) lasers
- 20 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2, 463-464
- https://doi.org/10.1109/leos.1999.811799
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Optical characteristics of 1.24-μm InAs quantum-dot laser diodesIEEE Photonics Technology Letters, 1999
- High-performance GaInAs/GaAs quantum-dot lasers based on a single active layerApplied Physics Letters, 1999
- InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μmApplied Physics Letters, 1999
- 1.3 μm room-temperature GaAs-based quantum-dot laserApplied Physics Letters, 1998
- Ultralow-threshold (50 A/cm2) strained single-quantum-well GaInAsSb/AlGaAsSb lasers emitting at 2.05 μmApplied Physics Letters, 1998
- Effect of phonon bottleneck on quantum-dot laser performanceApplied Physics Letters, 1997
- Multidimensional quantum well laser and temperature dependence of its threshold currentApplied Physics Letters, 1982