Depth resolution in SIMS study of boron δ-doping in epitaxial silicon
- 1 March 1994
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 85 (1) , 379-382
- https://doi.org/10.1016/0168-583x(94)95848-3
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Epitaxy and doping of Si and Si1−xGex at low temperature by rapid thermal chemical vapor depositionJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- p-type delta-doped layers in silicon: Structural and electronic propertiesApplied Physics Letters, 1990
- Theoretical and experimental studies of the broadening of dilute delta‐doped Si spikes in GaAs during SIMS depth profilingSurface and Interface Analysis, 1990
- Steep doping profiles obtained by low-energy implantation of arsenic in silicon MBE layersThin Solid Films, 1990
- P-type delta doping in silicon MBEThin Solid Films, 1990
- Measurement of narrow Si dopant distributions in GaAs by SIMSSurface and Interface Analysis, 1989