A high-performance AlGaAs/InGaAs/GaAs pseudomorphic MODFET-based monolithic optoelectronic receiver
- 1 January 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 4 (1) , 73-76
- https://doi.org/10.1109/68.124881
Abstract
A monolithically integrated optoelectronic receiver based on the pseudomorphic InGaAs on GaAs material system has been fabricated and tested for the first time. Quarter-micrometer modulation-doped field-effect transistors (MODFETs) with f/sub t/'s of 66 GHz are used in the two-stage transimpedance amplifier design. The circuit utilizes all active components including a metal-semiconductor-metal (MSM) photodetector and a common-gate FET active feedback resistor.Keywords
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