Measurement and analysis of the infrared absorption band for plasma-anodised film on GaAs(100)
- 14 May 1988
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 21 (5) , 799-803
- https://doi.org/10.1088/0022-3727/21/5/021
Abstract
The chemical composition of oxygen-plasma-anodised (OPA) film on GaAs(100) has been analysed using Auger electron spectroscopy (AES) and X-ray photo-electron spectroscopy (XPS) with argon-ion sputtering. There is xGa2O3+yAS2O3 in the oxide. Infrared absorption spectra of the OPA film on semi-insulating GaAs(100) were measured by a Nicolet Dx type. Fourier transform infrared spectrometer using the difference spectra method. The experiments show that a strong and broad infrared absorption band is in the range 385-1040 cm-1. It is mainly a superposition of the characteristic absorption modes of Ga2O3 and As2O3. In the near-infrared and medium-infrared range, the OPA film has a marked anti-reflection effect to the GaAs substrate.Keywords
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