Fluorine depth analysis using Rutherford backscattering
- 1 April 1987
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 24-25, 682-687
- https://doi.org/10.1016/s0168-583x(87)80224-0
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Effects of surface roughness on backscattering spectraNuclear Instruments and Methods, 1980
- Surface topology using rutherford backscatteringNuclear Instruments and Methods, 1980
- The optimization of a rutherford backscattering geometry for enhanced depth resolutionNuclear Instruments and Methods, 1975
- Principles and applications of ion beam techniques for the analysis of solids and thin filmsThin Solid Films, 1973
- Technique for determining concentration profiles of boron impurities in substratesJournal of Applied Physics, 1972
- On the application of Rutherford scattering and channelling techniques to study semiconductor surfacesSurface Science, 1972
- An application of high energy-resolution scattering measurements in channeling studiesRadiation Effects, 1972
- Determination of Surface Impurity Concentration Profiles by Nuclear BackscatteringJournal of Applied Physics, 1971
- Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scatteringCanadian Journal of Physics, 1968
- ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERINGCanadian Journal of Physics, 1967