Observation of piezoelectric field induced carriers in AlGaAs/InGaAs strained-layer heterostructures
- 23 March 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (12) , 1513-1515
- https://doi.org/10.1063/1.107288
Abstract
Hall effect measurements of GaAs/AlGaAs/InGaAs strained-layer heterostructures grown on [100], [311], and [111] substrates have been performed and it is observed that the two-dimensional carrier density is a strong function of growth orientation. The observed changes in carrier density are in the range of 5×1011–1.6×1012 cm−2 and are consistent with the generation of piezoelectric fields in [N11] orientated strained-layer heterostructures. These strain-induced effects can be used to alter the threshold voltages of field-effect transistor or produce large carrier densities without modulation doping.Keywords
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