Lifetime spectra (77 °K) of nitrogen−doped GaAs1−xPx
- 1 March 1975
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (3) , 1290-1298
- https://doi.org/10.1063/1.321695
Abstract
No abstract availableThis publication has 27 references indexed in Scilit:
- Effect of crystal composition on ``quasidirect'' recombination and LED performance in the indirect region of GaAs1−xPx:NApplied Physics Letters, 1974
- Behavior of above-gap NN pair states in radiative recombination in GaAs1−xPx : N+ (x=0.24, 77°K)Journal of Applied Physics, 1974
- Recombination transitions in Zn–N-doped GaAs1−xPx in the direct and indirect composition regionsJournal of Applied Physics, 1974
- The luminescent properties of nitrogen doped GaAsP light emitting diodesJournal of Electronic Materials, 1973
- Photoexcited resonance-enhanced nitrogen-trap GaAs1-xPx:N laserIEEE Journal of Quantum Electronics, 1973
- Radiative recombination mechanisms in GaAsP diodes with and without nitrogen dopingJournal of Applied Physics, 1972
- Spontaneous and stimulated photoluminescence on nitrogen A-line and NN-pair line transitions in GaAs1−x Px : NJournal of Applied Physics, 1972
- Stimulated Emission Involving the Nitrogen Isoelectronic Trap in GaAs1−xPxApplied Physics Letters, 1971
- The Effect of Nitrogen Doping on GaAs1−xPx Electroluminescent DiodesApplied Physics Letters, 1971
- Recombination processes associated with “Deep states” in gallium phosphideJournal of Luminescence, 1970