Problems in Precision Modeling of the MOS Transistor for Analog Applications
- 1 January 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
- Vol. 3 (1) , 72-79
- https://doi.org/10.1109/tcad.1984.1270059
Abstract
This paper summarizes the inadequacies of present MOSFET models as applied to analog circuit design and, in some cases, proposes solutions. Both efficient models suitable for CAD and more complex models are considered. Problem areas discussed include poor modeling of the moderate inversion region, poor modeling of the surface potential in strong inversion, ambiguous use of "threshold" voltages and poor expressions for them, poor modeling of the drain small-signal conductance, very poor modeling of intrinsic small-signal capacitances, inadequate small-signal equivalent circuit topologies, and poor implementation of known correct ideas in some CAD programs, including the dependence of the effective mobility on the substrate potential, the modeling of thermal noise in the nonsaturation region, and the modeling of ion-implanted devices.Keywords
This publication has 19 references indexed in Scilit:
- Moderate inversion in MOS devicesSolid-State Electronics, 1982
- Ion Implanted MOS Transistors — Depletion Mode DevicesPublished by Springer Nature ,1977
- Ion Implanted MOS TransistorsPublished by Springer Nature ,1977
- A precise MOSFET model for low-voltage circuitsIEEE Transactions on Electron Devices, 1974
- An accurate large-signal MOS transistor model for use in computer-aided designIEEE Transactions on Electron Devices, 1972
- Ion-implanted complementary MOS transistors in low-voltage circuitsIEEE Journal of Solid-State Circuits, 1972
- Drift velocity saturation in MOS transistorsIEEE Transactions on Electron Devices, 1970
- High-frequency network properties of MOS transistors including the substrate resistivity effectsIEEE Transactions on Electron Devices, 1969
- Conductance of MOS transistors in saturationIEEE Transactions on Electron Devices, 1969
- Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistorsSolid-State Electronics, 1966