Electroabsorption in an AlInAs/InP Type II Superlattice
- 1 January 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (1S) , 548-551
- https://doi.org/10.1143/jjap.32.548
Abstract
Electric-field-dependent optical absorption in an AlInAs/InP type II superlattice is observed at room temperature. The spectra of transmissivity and photoluminescence are also measured. The absorption coefficient changes with reverse-bias application at wavelengths of around 1.05 µm, where the linear absorption coefficient is small; however, photoluminescence peaks appear. These results reflect the characteristics of the type II superlattice in which optical transition is indirect in real space. The dependence of the optical properties on the thickness of the InP layer, which is the electron-confining layer, is also studied.Keywords
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