Photoluminescence of GaAs1-xPx:N with 0.67 ≦ × < 1 at various excitation levels and N doping
- 16 November 1980
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 62 (1) , K49-K52
- https://doi.org/10.1002/pssa.2210620153
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- Photoluminescence in nitrogen-doped gallium arsenide phosphide (GaAs1−xPx : N) for 0.6<x<1Journal of Applied Physics, 1978
- Theory of bound states induced by disorder and isoelectronic potentials: Ga(As,P):NPhysical Review B, 1977
- Direct Study of the Nature of Nitrogen Bound States in:NPhysical Review Letters, 1976
- Identification of recombination luminescence transitions in N-doped GaAs1−xPx (x = 0.87)Solid State Communications, 1976
- Effect of composition and pressure on the nitrogen isoelectronic trap inPhysical Review B, 1976