Low-temperature mobility behaviour in submicron MOSFETs and related determination of channel length and series resistance

This publication has 20 references indexed in Scilit:

• Experimental determination of short-channel MOSFET parameters
  Solid-State Electronics, 1985
• Transconductance degradation in VLSI devices
  Solid-State Electronics, 1985
• Influence of source-drain series resistance on MOSFET field-effect mobility
  Electronics Letters, 1985
• Some CMOS device constraints at low temperatures
  IEEE Electron Device Letters, 1985
• Détermination expérimentale des paramètres des transistors MOS
  Revue de Physique Appliquée, 1983
• An improved method to determine MOSFET channel length
  IEEE Electron Device Letters, 1982
• Threshold voltage models of short, narrow and small geometry MOSFET's: A review
  Solid-State Electronics, 1982
• MOS Device and technology constraints in VLSI
  IEEE Transactions on Electron Devices, 1982
• Measurement of MOSFET constants
  IEEE Electron Device Letters, 1982
• A new method to determine MOSFET channel length
  IEEE Electron Device Letters, 1980