Influence of proton implantation on the properties of CuInSe2single crystals (II)
- 1 January 1994
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 29 (3) , 417-426
- https://doi.org/10.1002/crat.2170290328
Abstract
Copper deficient p‐type conducting CuInSe2single crystals were implanted with 40 keV protons in the fluence range from 2.5 · 1014to 1.5 · 1016cm−2. Over the whole fluence range the implanted layers were n‐type conducting which is ascribed to passivation of the acceptors due to copper vacancies and formation of donors by hydrogen atoms located at interstitial positions. The thermal stability of the conductivity changes due to proton implantation is limited to temperatures below 100 °C.Keywords
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