The effect of grain boundary scattering on the electron transport of aluminium films
- 14 June 1979
- journal article
- research article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 12 (6) , 953-959
- https://doi.org/10.1088/0022-3727/12/6/018
Abstract
The electrical resistivity and temperature coefficient of the resistivity of polycrystalline aluminium films (500-1700 AA) deposited on to a glass substrate were measured in situ at temperatures of 50, 100 and 140 degrees C. The effect of grain boundary scattering was analysed using the Mayadas-Shatzkes theory (1970). It is observed that the Mayadas-Shatzkes equation reproduces the experimental observation quite faithfully with R=0.28 and p=0, which indicates that the contribution from grain boundary scattering should be quite appreciable.Keywords
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