The effect of grain boundaries on the electrical resistivity of polycrystalline copper and aluminium
- 1 May 1969
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine
- Vol. 19 (161) , 887-898
- https://doi.org/10.1080/14786436908225855
Abstract
The contribution to the electrical resistivity caused by grain boundaries has been measured in polycrystalline specimens of high purity copper and various grades of high purity aluminium. The specific grain boundary resistivity appeared to be independent of the impurity content, depended to a small extent on the temperature in the range 4·2 to 77°K, and at 4·2°K had the values (3·12 ± 0·18) × 10−12 ohm cm2 for copper and (2·45 ± 0·09) × 10−12 ohm cm2 for aluminium.Keywords
This publication has 11 references indexed in Scilit:
- Effect of Grain Boundaries on the Electrical Resistivity of High-Purity Iron at 4.2°KJournal of Applied Physics, 1967
- The electrical resistivity of silver, copper, aluminium, and zinc as a function of purity in the range 4–298° KCryogenics, 1966
- An experimental determination of electrical resistivity of dislocations in aluminiumPhilosophical Magazine, 1966
- Resistivity due to grain boundaries in pure copperPhysics Letters, 1965
- Electrical resistivity studies on polycrystalline and epitaxially grown gold filmsActa Metallurgica, 1964
- The electrical resistivity of dislocationsPhilosophical Magazine, 1963
- Electrical Size Effect in AluminumJournal of Applied Physics, 1963
- Structural Defects in Copper and the Electrical Resistivity MinimumPhysical Review B, 1954
- The anomalous skin effectProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1952
- Mean Free Paths of Electrons in Evaporated Metal FilmsPhysical Review B, 1952