An improved method of light-beam-induced current characterization of grain boundaries
- 1 April 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (7) , 2361-2363
- https://doi.org/10.1063/1.336334
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Light-beam-induced current characterization of grain boundariesJournal of Applied Physics, 1984
- Characterization of grain boundaries in polycrystalline solar cells using a computerized electron beam induced current systemReview of Scientific Instruments, 1983
- Carrier recombination at grain boundaries and the effective recombination velocitySolid-State Electronics, 1983
- Theory of beam-induced currents in semiconductorsApplied Physics Letters, 1983
- Theory of beam induced current characterization of grain boundaries in polycrystalline solar cellsJournal of Applied Physics, 1983
- Determination of surface recombination velocity at a grain boundary using electron-beam-induced currentJournal of Applied Physics, 1983
- The importance of the excitation volume in determination of surface recombination velocityIEEE Transactions on Electron Devices, 1982
- The determination of grain-boundary recombination rates by scanned spot excitation methodsJournal of Applied Physics, 1982
- Scanning electron microscope charge-collection images of grain boundariesJournal of Applied Physics, 1982
- Laser Scanning Technique for the Detection of Resistivity and Lifetime Inhomogeneities in Semiconductor DevicesPhysica Scripta, 1978