Alignment Signal from a Mark Deformed by Molecular Beam Epitaxial Overgrowth for Focused Ion Beam Implantation
- 1 April 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (4A) , L234-236
- https://doi.org/10.1143/jjap.26.l234
Abstract
The geometry of an alignment mark is deformed by molecular beam epitaxial (MBE) overgrowth on it. The secondary electron intensity profile was calculated by using Monte Carlo simulation when a focused ion beam (FIB) scanned across the deformed mark. The calculated result agreed with the measured one and we confirmed that this calculation method can be used even for complicated marks. The peak positions are very distinct after MBE growth and the measured alignment error after growth of a 1 µm layer was less than 0.3 µm. A 4 µm thick multi-layered/doped structure was fabricated by an iterative process in which MBE growth was followed by FIB implantation 4 times with an alignment error of less than 0.5 µm.Keywords
This publication has 8 references indexed in Scilit:
- Geometrical design of an alignment mark for focused ion beam implantation in GaAs using Monte Carlo simulation of ion trajectoriesJournal of Vacuum Science & Technology B, 1987
- Geometrical design of an alignment mark for maskless ion implantation in GaAsJournal of Vacuum Science & Technology B, 1986
- Maskless ion beam writing of precise doping patterns with Be and Si for molecular beam epitaxially grown multilayer GaAsJournal of Vacuum Science & Technology B, 1986
- Detection of alignment signals for focused ion beam lithographyApplied Physics Letters, 1985
- Computor control of maskless ion implanter with AuSiBe LM ion source for III–V compound semiconductorsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- GaAs Growth Using an MBE System Connected with a 100 kV UHV Maskless Ion ImplanterJapanese Journal of Applied Physics, 1984
- Selective Si and Be implantation in GaAs using a 100 kV mass-separating focused ion beam system with an Au–Si–Be liquid metal ion sourceJournal of Vacuum Science & Technology B, 1983
- FET fabrication using maskless ion implantationJournal of Vacuum Science and Technology, 1981