Interference filters using indium phosphide-based epitaxial layers grown by metalorganic vapor phase epitaxy
- 23 October 1989
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (17) , 1713-1714
- https://doi.org/10.1063/1.102197
Abstract
Bandpass interference filters with center wavelengths between 1.3 and 1.7 μm have been made with InGaAsP/InP epitaxial layers grown by metalorganic vapor phase epitaxy. The transmission spectra measured exhibit a full width half maximum of 7 nm with peak rejections up to 20 dB and are in good agreement with the results obtained from theoretical modeling of the 81-layer single half-wave Fabry–Perot structure used. This indicates very good control of the composition and thickness of the layers grown, which is confirmed by transmission electron microscopy of the structure.Keywords
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