Advanced model and analysis of series resistance for CMOS scaling into nanometer regime. I. Theoretical derivation
- 7 August 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 49 (3) , 457-466
- https://doi.org/10.1109/16.987117
Abstract
An advanced series resistance model is developed to accurately predict source/drain (S/D) series resistance of complementary metal-oxide semiconductor (CMOS) in the nanometer regime. The series resistance is modeled by division into four resistance components named SDE-to-gate overlap, S/D extension, deep S/D, and silicide-diffusion contact resistance, considering the nonnegligible doping-dependent potential relationship in MOS accumulation region due to scaled supply voltage, current behavior related to heavily doped ultra-shallow source/drain extension (SDE) junction, polysilicon gate depletion effects (PDE), lateral and vertical doping gradient effect of SDE junction, silicide-diffusion contact structure, and high-/spl kappa/ dielectric sidewall. The proposed model well characterizes unique features of nanometer-scale CMOS and is useful for analyzing the effect of source/drain parameters on CMOS device scaling and optimization.Keywords
This publication has 13 references indexed in Scilit:
- Source-side barrier effects with very high-K dielectrics in 50 nm Si MOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Impact of polysilicon depletion in thin oxide MOS technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Series resistance limits for 0.05μm MOSFETsSuperlattices and Microstructures, 2000
- Models for electron and hole mobilities in MOS accumulation layersIEEE Transactions on Electron Devices, 1999
- A model for specific contact resistance applicable for titanium silicide-silicon contactsSolid-State Electronics, 1996
- The impact of device scaling and power supply change on CMOS gate performanceIEEE Electron Device Letters, 1996
- Series resistance of self-aligned silicided source/drain structureIEEE Transactions on Electron Devices, 1993
- An analytical threshold-voltage model of trench-isolated MOS devices with nonuniformly doped substratesIEEE Transactions on Electron Devices, 1992
- Series resistance of silicided ohmic contacts for nanoelectronicsIEEE Transactions on Electron Devices, 1992
- Titanium disilicide contact resistivity and its impact on 1-µm CMOS circuit performanceIEEE Transactions on Electron Devices, 1987