The effect of molecular-beam-epitaxial growth conditions on the electrical characteristics of In0.52Al0.48As/In0.53Ga0.47As resonant tunneling diodes
- 15 January 1989
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (2) , 842-845
- https://doi.org/10.1063/1.343075
Abstract
We have investigated the dependence of the performance characteristics of In0.52 Al0.48As/ In0.53 Ga0.47 As resonant tunneling diodes upon molecular‐beam‐epitaxial growth parameters. The roughness of the growth front, leading to intrawell‐size fluctuations and the V/III flux ratio at a fixed growth temperature are found to be important parameters affecting the performance of these devices. By means of a simple model, we have semiquantitatively related the peak current to the interface roughness. Defects and traps in the In0.52 Al0.48 As barriers, on the other hand, produced partially by nonoptimal V/III flux ratios, may produce shunt paths for tunneling, again reducing the resonant tunneling current peak‐to‐valley ratio. Under optimum growth conditions we have measured current peak‐to‐valley ratios of 6.1 and 21.6 at 300 and 77 K, respectively. These are the best values reported so far for this heterostructure system.This publication has 14 references indexed in Scilit:
- Room-temperature operation of Ga 0.47 In 0.53 As/AI 0.48 In 0.52 As resonant tunnelling diodesElectronics Letters, 1987
- Resonant tunneling diodes with AlAs barrier: Guides for improving room-temperature operationJournal of Applied Physics, 1987
- Prospects For Quantum Integrated CircuitsPublished by SPIE-Intl Soc Optical Eng ,1987
- Dependence of resonant tunneling current on Al mole fractions in AlxGa1−xAs-GaAs-AlxGa1−xAs double barrier structuresApplied Physics Letters, 1987
- Large room-temperature effects from resonant tunneling through AlAs barriersApplied Physics Letters, 1986
- Determination of the microscopic quality of InGaAs-InAlAs interfaces by photoluminescence—Role of interrupted molecular beam epitaxial growthApplied Physics Letters, 1986
- Resonant tunneling transistor with quantum well base and high-energy injection: A new negative differential resistance deviceJournal of Applied Physics, 1985
- Tunneling Hot Electron Transistor Using GaAs/AlGaAs HeterojunctionsJapanese Journal of Applied Physics, 1984
- Growth and photoluminescence spectra of high-purity liquid phase epitaxial In0.53Ga0.47AsJournal of Applied Physics, 1983
- Tunneling in a finite superlatticeApplied Physics Letters, 1973