Shallow Hole Levels in Ion-Implanted CdS
- 1 November 1971
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 42 (12) , 5125-5130
- https://doi.org/10.1063/1.1659902
Abstract
Thermally stimulated current measurements have shown the existence of a hole level 0.05 eV above the valence‐band edge in P‐implanted CdS. The thermally released carrier could be identified as a hole since the measurement was performed on a diode structure. An additional level with an ionization energy of 0.45 eV was also present. Capacitance measurements of space‐charge density before and after level emptying indicated that some carrier multiplication mechanism is operative during current flow.This publication has 18 references indexed in Scilit:
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