Heteroepitaxial growth of alkali halide thin films on GaAs substrates
- 1 May 1992
- journal article
- Published by Elsevier in Surface Science
- Vol. 269-270, 790-796
- https://doi.org/10.1016/0039-6028(92)91350-k
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Heteroepitaxial growth of alkali halides on a GaAs(001) substrateJournal of Vacuum Science & Technology A, 1992
- Heteroepitaxial growth of KCl and LiF on a cleaved (001) face of KBrSurface Science, 1991
- Electronic properties of ionic insulators on semiconductor surfaces: Alkali fluorides on GaAs(100)Physical Review B, 1989
- Real-time observation of the surface alteration in LiF during electron irradiationSolid State Communications, 1989
- Growth and characterization of single crystal insulators on siliconCritical Reviews in Solid State and Materials Sciences, 1989
- Epitaxial relations in CaxSr1−xF2 films grown on GaAs {111} and Ge(111) substratesApplied Physics Letters, 1985
- Structure and reactivity of GaAs surfacesProgress in Surface Science, 1981
- Composition, structure, surface states, and O2 sticking coefficient for differently prepared GaAs(111)As surfacesSurface Science, 1977
- Epitaxial Growth of Gallium Phosphide on Cleaved and Polished (111) Calcium FluorideJournal of Applied Physics, 1970