Ethyliodide n-type doping of Hg1−xCdxTe (x=0.24) grown by metalorganic molecular beam epitaxy
- 28 November 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (22) , 2836-2838
- https://doi.org/10.1063/1.112535
Abstract
Conductive n-type Hg1−xCdxTe epitaxial layers with x=0.24 were grown by metalorganic molecular beam epitaxy using iodine doping. Ethyliodide was chosen as the dopant precursor based on previous results obtained for CdTe. The low-temperature (20 K) electron concentration increased from an undoped level of ∼1015 cm−3 to 5×1018 cm−3 for ethyliodide flow rates from 10−4 to 10 sccm. High electron mobilities were measured and secondary ion mass spectrometry measurements indicated a high degree of electrical activity. These results demonstrate that iodine is a highly effective n-type dopant for long-wavelength HgCdTe alloys and device structures.Keywords
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