Influence of nucleation on the kinetics of boron precipitation in silicon
- 1 October 1987
- journal article
- solids and-materials
- Published by Springer Nature in Applied Physics A
- Vol. 44 (2) , 135-141
- https://doi.org/10.1007/bf00626414
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Electrical characterization of p+/n shallow junctions obtained by boron implantation into preamorphized siliconSolid-State Electronics, 1986
- Dual ion implantation technique for formation of shallow p+/n junctions in siliconJournal of Applied Physics, 1983
- Precipitation as the Phenomenon Responsible for the Electrically Inactive Arsenic in SiliconJournal of the Electrochemical Society, 1983
- Precipitation as the phenomenon responsible for the electrically inactive phosphorus in siliconJournal of Applied Physics, 1982
- Electrical Properties and Stability of Supersaturated Phosphorus‐Doped Silicon LayersJournal of the Electrochemical Society, 1981
- Simulation of doping processesIEEE Transactions on Electron Devices, 1980
- High concentration effects of ion implanted boron in siliconApplied Physics A, 1980
- The solid solubility and thermal behavior of metastable concentrations of As in SiApplied Physics Letters, 1980
- Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF+2 or Si++B+Journal of Applied Physics, 1979
- Influence of annealing on the concentration profiles of boron implantations in siliconApplied Physics A, 1973