Nature of the band discontinuities at semiconductor heterojunction interfaces
- 31 July 1982
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 43 (3) , 163-166
- https://doi.org/10.1016/0038-1098(82)90102-8
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Photoemission studies of heterojunction interface formation: Ge–GaAs(110) and Ge–Si(111)Journal of Vacuum Science and Technology, 1981
- Precise Determination of the Valence-Band Edge in X-Ray Photoemission Spectra: Application to Measurement of Semiconductor Interface PotentialsPhysical Review Letters, 1980
- Semiconductor Heterojunction Interfaces: Nontransitivity of Energy-band DiscontiuitiesPhysical Review Letters, 1979
- Surface reactions and interdiffusionJournal of Vacuum Science and Technology, 1979
- Angle-resolved photoemission measurements of band discontinuities in the GaAs-Ge heterojunctionApplied Physics Letters, 1978
- Ge–GaAs(110) interface formationJournal of Vacuum Science and Technology, 1978
- Theory of the energy-band lineup at an abrupt semiconductor heterojunctionPhysical Review B, 1977
- Elementary theory of heterojunctionsJournal of Vacuum Science and Technology, 1977
- Near-IR detection by PbS-GaAs heterojunctionsPhysica Status Solidi (a), 1973
- Experiments on Ge-GaAs heterojunctionsSolid-State Electronics, 1962